Abstract
We have measured the growth rate of thin films deposited by the decomposition of titanium tetraisopropoxide (TTIP) in the presence of carrier gas. Experiments are performed at TTIP partial pressures between 0.005 and 0.7 torr and a substrate temperature of 573 K, conditions where second‐order kinetics have previously been observed in the presence of TTIP alone. When 5 torr of is present as a carrier gas, the kinetics become first order in TTIP concentration. By fitting the observed rates to the rate expression for the bimolecular reaction mechanism proposed in the earlier study, we obtain a value of for the relative efficiency of for collisional energy transfer, compared to TTIP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
