Abstract
Copper thin films have been deposited by thermal decomposition of copper acetylacetonate-oxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been obtained at temperatures as low as 300°C. Under UV illumination, this temperature threshold decreased down to 225°C. The influence of substrate temperature and layer thickness on film roughness as observed by Atomic Force Microscopy is discussed. The kinetics of Cu(acac) 2 decomposition has been investigated as a function of precursor partial pressure and substrate temperature in the range of 200-350°C, and the maximum deposition rate of 25 A/min has been reached in the mass transport regime at a substrate temperature of 350°C and a precursor partial pressure of 0.04 Torr. The deposition rate could be substancially enhanced by UV photoassistance.
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