Abstract
AbstractComparative study of growth kinetics of the AlxGa1‐xN (x = 0‐1) layers of different polarity, grown by plasma assisted molecular beam epitaxy (PA MBE) under different growth conditions (substrate temperature, group III to activated nitrogen and Al to Ga flux ratios) and on different buffer layers, is presented. The 60 °C higher temperature stability of N‐face AlGaN layers is detected. The strong influence of elastic stress on growth kinetics of metal‐polar AlxGa1‐xN (x > 0.2) layers is observed and discussed. It was found that two‐dimensional growth of AlGaN films of the same composition on different buffer layers at TS = 700 °C can be achieved at different group III surface enrichment, the AlGaN(0001)/c‐Al2O3 films exhibiting the atomically smooth surface at group III to activated nitrogen flux ratio FIII/FN *gradually increased from 1.3 to 2 with the x variation from 0.1 to 0.8. In this case the alloy composition is controlled by the variation of Al flux only (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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