Abstract
The decomposition process of trimethylgallium (TMGa) during the MOMBE growth of GaAs with As 4 has been studied from the behaviour of the growth rate and critical temperature measurements using RHEED intensity oscillations. Our results conclusively demonstrate the importance of surface As sites and the nature of the step edges in determining the decomposition of TMGa, as well as a greater anisotropy in the critical temperature compared to MBE growth using elemental Ga and MOMBE growth using triethylgallium (TEGa).
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