Abstract
The decomposition process of trimethylgallium (TMGa) during the MOMBE growth of GaAs with As 4 has been studied from the behaviour of the growth rate and critical temperature measurements using RHEED intensity oscillations. Our results conclusively demonstrate the importance of surface As sites and the nature of the step edges in determining the decomposition of TMGa, as well as a greater anisotropy in the critical temperature compared to MBE growth using elemental Ga and MOMBE growth using triethylgallium (TEGa).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
