Abstract
CdSe dot generation and dot development on a ZnSe(100) surface are investigated by insitu observation of specular spot intensity (Isp) in a reflection high energy electron diffraction (RHEED) pattern during CdSe growth, using the alternate molecular beam supplying method. From the temporal Isp observation, it is confirmed that CdSe dots are generated immediately after the 1-ML CdSe is formed on 2-ML CdSe wetting layer on ZnSe(100). We also confirmed that the dot growth by Ostwald ripening continues during Cd-beam irradiation, and that the dots sublimate when they are exposed to vacuum at a growth temperature of 250°C. The beam interruption (or growth interruption) strongly affects on the PL peak energy.
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