Abstract
We studied growth enhancement of radish sprouts (Raphanus sativus L.) induced by low pressure O2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O2 plasma irradiation is 30–60% greater than that without irradiation. O2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not.
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