Abstract
We report on the optimization of growth of cubic GaN and AlN binaries together with cubic GaInN and GaAlN ternary alloys. Reflection high energy diffraction oscillations are observed for all these cubic materials which allow us to determine precisely the stoichiometric growth conditions. The alloy compositions deduced from the growth rate variations by adding indium or aluminium are compared with those obtained by Rutherford backscattering spectra.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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