Abstract
Growth of crystalline semiconductor material with uniform electrical and optical properties requires a smooth growth face at which bunching of growth steps does not take place. Investigation of GaAs growth by liquid phase epitaxy shows that the two growth parameters, growth rate and growth face off-orientation, considerably influence the step bunching process. The appearance of the growth face suggests a distinction between four different growth regimes: facet growth, terrace growth, unstable terrace growth and terrace free growth. Small as well as large off-orientations suppress the formation of bunched steps at low growth rates. Small off-orientation additionally prevents bunching at high growth rate. Growth faces with an off-orientation exceeding 0.2° show enhanced step-bunching with increasing growth rate.
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