Abstract
In order to understand growth feature of GaN on (001)GaAs, GaN layers were grown by hydride vapor-phase epitaxy (HVPE) under various growth conditions. Hexagonal GaN has dominantly grown even on (001)GaAs for the substrate temperatures below 800°C even though the buffer layer had an almost pure cubic structure. Hexagonal component of the grown layer also greatly depends on the V/III ratio of the supplied gases as well as quality of buffer layer, and it was less than 1% for a good cubic buffer layer and an optimum V/III ratio.
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