Abstract
The epitaxial growth characteristics of alloys composed of CaF 2 and MgF 2 (Ca x Mg 1− x F 2) layers on Si(1 1 1) substrates using molecular beam epitaxy (MBE) were investigated. For MgF 2, growth temperatures lower than 400 °C were found to be necessary in order to suppress chemical reactions with the Si substrate. It was found that the epitaxial relationship of tetragonal rutile-type MgF 2 was MgF 2(1 1 0)[0 0 1]//Si(1 1 1) [ 1 1 ¯ 0 ] . By adding a small amount of MgF 2 to the CaF 2, very smooth surfaces for 1.2-nm-thick Ca x Mg 1− x F 2 layers were obtained over a wide range of compositions, i.e. 0.7⩽ x⩽0.9. Pinholes, which were always generated in pure CaF 2 layers, were eliminated in these alloy layers. Furthermore, Ca x Mg 1− x F 2 alloy layers were found to grow epitaxially with a cubic fluorite type of crystalline structure on Si(1 1 1) substrates over a wide range of composition, i.e. 0.2⩽ x⩽0.9.
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