Abstract
Thin film rutile has been grown by the chemical vapor deposition reaction of and O2 on silicon and a variety of oxide substrates over a range of temperatures (673°–1320°K) and reactant partial pressures . At high oxygen partial pressures between 990° to 1100°K, the films have been found to contain the rutile modification of almost exclusively. Polycrystalline deposits on silicon, fused quartz, and amorphous silica (thermally grown or chemically vapor deposited) substrates displayed some preferred growth orientation (fiber texture). Epitaxial films were obtained on (001)‐, (110)‐ and (111)‐rutile, , and (0001)‐sapphire substrates at elevated temperatures.
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