Abstract
AbstractThe HgI2 single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI2 single crystals have been investigated in detail. It is found by means of X‐ray diffraction that the crystals grown with the c‐axis parallel or perpendicular to the pedestal plane have both the prism faces {110}.
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