Abstract
Growth characteristics of (1 0 0)CdZnTe layers in metalorganic vapor-phase epitaxy have been studied using dimethylzinc (DMZn), dimethylcadmium (DMCd), and diethyltelluride as precursors. Variations of Zn composition and layer growth rate were examined by changing the DMZn supply ratio from 0 (no DMZn) to 1.0 (no DMCd). The growth rate of CdZnTe layers decreases monotonically with increase of the DMZn supply ratio. On the other hand, the Zn composition x of grown layers increases gradually up to x=0.08 with an increase in the DMZn supply ratio from 0 to 0.8, beyond which the Zn composition increases abruptly to ZnTe. The abrupt transition of Zn composition is suppressed by increasing the VI/II ratio. The growth mechanism of CdZnTe layers was studied based on the growth characteristics of CdTe and ZnTe.
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