Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Abstract

We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15×10−2Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300°C were 4.4×1018cm−3 and 28.7cm2/V·s, respectively.