Abstract
GaAs nanowires were grown on GaAs (100) substrates by vapor–liquid–solid growth. About 8% of these nanowires grew in 〈110〉 directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the evolution of 〈110〉 nanowires. Kinking and branching is attributed to growth instabilities resulting from equivalent surface free energies for 〈110〉 growth directions. Transmission electron microscopy verified that 〈110〉 nanowires are defect free.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
