Abstract
AbstractInGaN/GaN self‐assembled quantum dots (QDs) were grown on (0001) sapphire substrates by low pressure metalorganic chemical vapor deposition. The growth behavior of the InGaN/GaN QDs was examined under different experimental conditions. The InGaN/GaN QDs were formed in Stranski‐Krastanow growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer‐Weber growth mode by the periodic interruption of the MO sources. In addition, a quantum ring (QRs) structure was confirmed during the formation of InGaN QDs. The In content in the InGaN QDs appeared to increase with decreasing temperature. The photoluminescence spectrum (PL) showed peaks for the GaN buffer layer and the InGaN QDs layer at 362.2 nm (3.41 eV) and between 420–460 nm (2.96–2.70 eV), respectively. The composition of InGaN QDs was estimated from the PL peak position to be In0.12‐0.15Ga0.88‐0.85N. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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