Growth Behaviour and Electrical Resistivity Relationship of Silver Nanoparticle Thin Film

Abstract

Normal grain growth of silver thin film predominates above the critical transition temperature below which bimodal grain growth predominates. In this experiment silver Nano layers were prepared by spin coating on glass substrate and which were annealed at different temperature. The lowest attainable resistance was 1.23 Ohm/sq. The woulf plot of fcc silver suggests that during growth (111) family plane predominated on surface of every grain and that was true according to SEM figure. This is the reason for low resistivity of silver thin film. Not only on surface but also this stable (111) plane was present on grain boundary as singular interface. However, ADF Simulation has been done to construct 40 nm silver nano particle and to construct band structure of silver. The valance band and conduction band overlap shows the metallic characteristic property of silver.