Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor deposition

Abstract

The growth behavior of GaAsAlGaAs during metalorganic chemical vapor deposition (MOCVD) on V-grooved GaAs(311)A substrates, specifically its dependence on growth temperature and VIII ratio, has been investigated. A new (100) facet has evolved at the outer edge of the short side wall of the groove. The length of this facet decreases with increasing the growth temperature and reducing the VIII ratio. The phenomena can be explained by the surface mobility or incorporation rate dependence of group III species on each facet as it appeared in this study. The best surface morphology has been obtained at 750°C. The newly evolved (100) facet has a defect free surface. Photoluminescence (PL) measurements have been carried out after growing 2 kinds of GaAs quantum wells (QWLs) on the patterned (311)A substrates. In the case of QWLs with a thick AlGaAs buffer layer, 3 peaks from the (100), (433)A and (311)A planes have been identified, while the (100) peak was not detected in the case of a thin buffer layer.