Abstract
High-indium-composition InGaN quantum dots (QDs) have been grown using a growth interruption method by metal organic vapor phase epitaxy. Effects of V/III ratio and temperature on the density, size, and formation mechanism of InGaN QDs by this method are investigated by atomic force microscopy and photoluminescence measurements. At a V/III ratio of 16600 and a temperature of 650 °C, adatoms can migrate on the surface and combine with each other to form QDs to relax stress when growth is interrupted. A lower V/III ratio of 8300 can increase the migration capability of adatoms, and stress is relaxed by formation of dots when the first nominal InGaN layer is grown, which results in the lower density and higher indium composition of QDs after the second InGaN layer growth. Three-dimensional growth can be enhanced and the density of QDs increases at a temperature of 600 °C.
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