Abstract
The growth mechanisms of GaSb in a metal–organic vapor-phase epitaxy (MOVPE) system were studied for both trimethyl gallium (TMG)/trimethyl antimony (TMSb) and triethyl gallium (TEG)/TMSb growth chemistries. The effect of growth temperature and precursor mole fractions on GaSb growth rate was determined experimentally. Numerical analysis of the reactor and growth process was described in a combined chemical–thermal–fluid flow model. A Langmuir–Hinshelwood-type mechanism involving a surface reaction between adsorbed monomethyl gallium (MMG) and adsorbed monomethyl antimony (MMSb) or adsorbed Ga and adsorbed MMSb was proposed for the growth of GaSb by MOVPE using TMG or TEG and TMSb chemistries, respectively. The chemical model for TMG/TMSb chemistry included bounds on the surface chemistry derived for the range of V/III precursor ratio which were observed to lead to a second phase, i.e., elemental Ga or Sb, formation. Two growth regimes were observed for TMG/TMSb chemistry: above 575 °C the growth rate was mass transfer controlled whereas for lower temperatures it is kinetically limited. No such temperature dependence has been found for the TEG/TMSb chemistry over all experimental employed ranges of growth parameters.
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