Abstract
Various kinds of β-Ga2O3 nanomaterials such as nanowires, nanorods, nanobelts, nanosheets and nanocolumns have been successfully synthesized by simple evaporation of gallium powder with no assisted catalyst in a flow of argon gas. The as-synthesized materials were pure, structurally uniform, single crystalline with monoclinic β-Ga2O3 structure (space group: C2 m−1) and free from defects. The synthesized nanomaterials were deposited with a growth order of nanocolumn/nanorod, nanowire/nanobelt and nanosheet with synthesis time. The nucleation site was looked over in detail. We present evidence that the surface, edge and tip of previously grown β-Ga2O3 nanomaterials again provide a nucleation site of new β-Ga2O3 nanomaterials. Because no metal catalysts were introduced into our growth, a vapor–liquid–solid (VLS) growth is not the likely process in this work, indicating that the observed nanomaterials were grown via a vapor–solid (VS) mechanism.
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