Growth behavior and interfacial reaction between carbon nanotubes and Si substrate

Abstract

The effect of the interfacial reaction of Co catalyst with a Si substrate on growth of carbon nanotubes (CNTs) was investigated. Well-aligned multiwall CNTs (MWCNTs) were synthesized and applied barrier layers by microwave plasma-enhanced chemical vapor deposition (MPECVD). Growth proceeded in a flowing mixture of H2, CH4, and N2 as precursors at a temperature of 600 °C and a −200 V substrate bias; Co was sputtered as the catalytic material. Transmission electron microscopy (TEM) and x-ray diffraction were employed to examine the growth behavior of CNTs on Si (100) substrates on which Co had been deposited by MPECVD. The TEM results indicate that discrete conical CoSi2 layers with {111} and (100) faceted interfaces were formed on a Si (100) substrate during CNTs growth. Direct evidence that the growth is by tip growth and base growth is presented. The results show that well-aligned CNTs exhibit a significant emission current. The field emission characteristics of CNTs are contributed to the relationship between the application of different barrier layers and the growth mode of CNTs.