Abstract
We report the realization of all-optical photonic switches using strained InGaAs/GaAs multiple quantum well based inverted cavity asymmetric Fabry-Perot reflection modulators monolithically integrated with GaAs/AlGaAs based heterojunction phototransistors. The photonic switches show both bistable and non-bistable switching behavior with a contrast ratio of 12:1 and optical gain of 2 to 4 dB. The design and growth considerations for such an integrated structure are also discussed.
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