Growth and Variable Temperature Hall Effect Study of SrPb3Br8 Crystal with Low Phonon Energy

Abstract

AbstractTransparent and homogeneous SrPb3Br8 single crystals with the size of Ø25 mm × 50 mm are grown by the modified vertical Bridgman method. X‐ray diffraction results reveal that the middle part of the crystal is pure in chemical compositions, while the tip part contains low content of Sr(PbBr3)2(H2O)5. X‐ray photoelectron spectroscopy analysis points out the absorption to C, O‐containing substances of the pristine surfaces of SrPb3Br8 wafers. The Raman results prove the low phonon energy of the SrPb3Br8 (116 cm−1). Transmission spectra demonstrate its wide transparent range (0.37–25 µm) and high transmittance in the mid‐infrared range except for several absorption lines. Moreover, Hall measurements show that the SrPb3Br8 sample is n‐type conductive at 110–300 K, and the Hall coefficient RH, resistivity ρ and mobility µH decrease as temperature increases while the carrier concentration n has an opposite trend. The conduction mechanism and scattering mechanism of SrPb3Br8 crystal at different temperatures has been studied by analyzing ln(|RH|)−T−1, n−T and µH−T curves, and the dominant donor defect ionization energy ED is calculated to be 0.077 eV.