Growth and transport properties of tin monosulphoselenide single crystals

Abstract

The binary and ternary mixed single crystals of the orthorhombic IV–VI family in the form of SnS x Se 1− x (where x=0, 0.25, 0.50, 0.75 and 1) were grown by direct vapor transport technique. The lattice parameters of each grown crystal were determined from the X-ray diffraction analysis. The grown crystals were examined under the optical zoom microscope for their surface microstructure study. The low-temperature resistivity measurements were carried out in the temperature range 123–303 K using four-probe method. The Hall coefficient, carrier concentration and Hall mobility of each sample was determined from Hall effect measurements at room temperature. From the optical absorption spectra obtained in the range 1000–1500 nm, optical band gap of each sample was determined at room temperature. The results obtained are reported systematically.