Abstract
AbstractThin Nb films were deposited by MBE on (0001)α-Al2O3 in UHV. At a substrate temperature of 800°C, reflection high energy electron diffraction (RHEED) revealed that the film grew with the orientation relationship (planes of similar symmetry are parallel to each other): (0001)α-Al2O3 ‖ (111)Nb; [2110]α-Al2O3 ‖ [110]Nb. Investigations with conventional transmission electron. microscopy (CTEM) revealed that the film was not perfectly epitaxial after deposition. Small Nb grains with different orientations were embedded in the epitaxial Nb film. During annealing at temperatures well above the deposition temperature, secondary grain growth of the small embedded Nb grains occured, leading to a different epitaxial relationship between the Nb film and the sapphire: (0001)α-Al2O3 ‖ (110)Nb; [0110]α-Al2O3 ‖ [001]Nb.
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