Abstract
Silicon Quantum Dots (Si-QDs) embedded in dielectric matrices are being pursued as possible candidates for third generation solar cells. In this regard achieving higher QD density and control over size is of prime importance. Amorphous hydrogenated silicon nitride (a-SiNx:H) is an attractive host for Si-QDs and can be used as an anti reflection coating due to the possibility of tuning its refractive index and bandgap. Irradiation of these films with energetic ions holds promise as a means to achieve greater control over density and size distribution of the embedded Si-QDs. We report on the effects of irradiation on structural and optical properties of Si rich a-SiNx:H films with 100MeV Ni7+ ions. The films undergo compaction with increasing fluence. The structural changes due to irradiation and subsequent changes in the reflectance and luminescence are correlated.
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