Abstract
In this Letter, CsV3(Sb1-xSex)5 (0 ≤ x ≤ 0.1) crystals were grown using a Sb-rich self-flux method, and studied by XRD, Laue Diffraction, SEM, EDS, and magnetization measurements. It was found that at low doping concentration (x≤ 0.08), the crystal has good quality, and the nominal and actual components are basically consistent. At x = 0.1, the crystal quality decreases, and the actual doping amount starts to be slightly lower than the nominal value. Se doping suppresses superconducting transition due to its band filling effect and negative chemical pressure effect on CsV3Sb5. In addition, Se doping also has an inhibitory effect on the CDW transition in CsV3Sb5. Compared with hole type dopants, this electronic type dopant has a weaker inhibitory effect on TCDW, indicating an asymmetric response of electronic characteristics to carrier charge symbols in the system.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
