Abstract
In this work structural, optical and electrical properties of CuIn0.8Ga0.2Se2 and CuIn0.5Ga0.5Se2 compounds in both ingots and thin film forms are investigated. Peaks obtained by X ray diffraction are analyzed and calculated value of c/a ≈ 2 shows that prepared samples are of chalcopyrite structure. Gap (Eg) and resistivity (ρ) of CuIn0.5Ga0.5Se2 thin films are slightly high, whereas CuIn0.8Ga0.2Se2 thin films with values of Eg = 1.16 eV and ρ = 2.4 Ω cm indicate that CuIn0.8Ga0.2Se2 compound is suitable for fabrication of high efficiency solar cells.
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