Abstract
Wide-gap insulator films, CaZrO 3, CaHfO 3, LaGaO 3, and NdGaO 3, were grown on SrTiO 3(1 0 0) substrates with the aim of obtaining a gate insulator for epitaxial oxide devices. We show that CaZrO 3 and CaHfO 3 films were epitaxial and had a multi-domain in-plane structure due to their highly distorted perovskite structure. Most of the LaGaO 3 and NdGaO 3 films were polycrystalline, and therefore showed relatively high leak currents. CaHfO 3 had the best crystallinity among these four materials.
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