Abstract
Ce/TM (transition metal) (TM=Cu, Fe) bilayer has been grown on STO (1 0 0) and GaAs (1 1 0) substrates by MBE method. The structure of TM buffer layers is dominated by substrates. As-deposited Ce is amorphous at RT on any TM buffer, but it changes to Ce–TM compounds by annealing. In the case of Ce/Cu on STO (1 0 0), a single phase could be obtained by annealing. Ce/Fe system shows interesting growth characteristics depending on the substrate temperature and the structure of Fe buffer. These results may provide us with a chance to control the formation of Ce–Cu or Ce–Fe compounds by using the annealing and the crystal structure of buffer layers.
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