Abstract
Europium silicide nanoislands and films with Eu coverage in the range 0.3ML–303ML were grown on the vicinal Si(001) surface with 4° miscut towards [110] by molecular beam epitaxy. The nanostructures were characterized by atomic force microscopy, reflection high energy electron diffraction, in situ synchrotron radiation X-ray absorption near edge structure spectroscopy and ex situ X-ray diffraction. The analysis revealed the formation of EuSi2 with a tetragonal structure. By increasing the Eu coverage the surface morphology gradually changes from isolated islands through films with very rough surface to thick films with smoother surface.
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