Abstract
AbstractIn the present contribution an X-ray diffraction (XRD) study of thin films in the Mo-Bi-O system is reported. The samples were grown by MOCVD on A12O3substrates. Several thin films have been grown starting from a Mo:Bi ratio in the two metallorganic precursors ranging from 6:1 to 1:1, thus obtaining films constituted by MoO3and Mo-Bi-O layers with different thicknesses. The effect of the underlying Mo-Bi-O layer on the preferred orientation of the MoO3layer, which is found in the samples with a high Mo:Bi ratio in the precursors, is discussed. Moreover, an equation is proposed relating the percentage of the phase constituting the film, as given by the Rietveld leastsquares procedure, and the film thickness. Thus it is shown that the growth rate of the pure MoO3film is much higher than that of the Mo-Bi-O oxide film. A tentative explanation can be given by considering a possible growth inhibiting action by Bi in this system.
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