Abstract
The growth process for spherical silicon crystals using melting and recrystallization of polysilicon powder and polysilicon granules is investigated and the structural properties of the fabricated silicon spheres are characterized. The recrystallization conditions that influence the crystallinity of the spheres are studied. It is shown by means of defect delineation that crystalline structures are obtained when the melt is solidified at temperatures above 1400°C. The results of electron backscattering confirm the formation of single-grain structures. When solidification takes place at temperatures below 1400°C, double- and multiple-grain structures start to form. The concentration of impurities during the recrystallization of the spheres, monitored by secondary-ion mass spectroscopy, show that the rate of impurity removal from the crystalline phase is much lower than predicted by segregation at the melt–solid interface, which is attributed to the nonequilibrium conditions in the solidification process.
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