Abstract
We studied the epitaxial growth of CeO 2 thin films as a function of deposition temperature (200–800 °C), r.f. magnetron power (25–125 W) and anode–cathode distance (2–6 cm). The films were grown on Si(111) substrates by on-axis r.f. magnetron sputtering of a cerium oxide target in an Ar plasma. The crystalline quality of the films was investigated using X-ray diffraction and Raman spectroscopy. Our results show that the crystalline quality of the films can be improved by a post-growth rapid thermal annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
