Growth and silicon doping of Al xGa 1− xP on GaP by gas source molecular beam epitaxy

Abstract

Using PH 3 as the gas source and elemental Al and Ga, Al x Ga 1 − x P on (100) orientation GaP has been grown by gas source molecular beam epitaxy (GSMBE). In situ RHEED analysis indicates the growth of good quality single crystal epitaxial Al x Ga 1 − x P can be achieved for all Al mole fractions ranging between 0 and 1. Using elemental silicon as the dopant source, free electron carrier concentrations as high as 8×10 18 cm -3 for GaP and 6×10 18 cm -3 for Al 0.35Ga 0.65P have also been achieved with no observable saturation effects, which indicates higher carrier concentrations are obtainable.