Abstract
The microstructure of (0 0 1)-oriented epitaxial CeO 2 thin layers grown on R-plane sapphire (Al 2O 3) by off-axis RF sputtering was investigated. The crystalline perfection of CeO 2 layers was characterized by Bragg–Brentano X-ray spectra, rocking curves (ω-scan) and TEM. The surface morphology was controlled by AFM. The as-deposited layers display small size mosaicity (∼20 nm), arcing 6–7°, and surface roughness ≈4 nm. Our results show that the degree of epitaxy can be increased by post-deposition annealing (grain size ∼50 nm, arcing 4–5° and surface roughness ≈0.6 nm). Microwave properties of YBCO films deposited on the as-deposited and annealed CeO 2 buffer layers are also mentioned.
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