Abstract
Single domain GaAs and AlGaAs layers were grown on (100)-oriented Si substrates by MOCVD and MBE. Grown GaAs layers showed a mirror-like surface, high photoluminescence intensity, high electron mobility and low etch pit density. TEM observation showed that the dislocations were concentrated in a narrow region near the interface. AlGaAs layers grown on the GaAs layers showed nearly the same photoluminescence intensity as those of the layers grown on GaAs substrates. FETs and ring oscillators on the GaAs layers showed almost the same characteristics as those on GaAs substrates.
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