Abstract
Single-crystalline Si1 − xGex ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si1 − xGex single crystals have been studied as functions of the germanium content.
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