Abstract
Nanocrystalline Ge:H and (Ge,C):H are potentially important materials for photovoltaic energy conversion. In this paper, we report on the growth of these materials using remote ECR plasma deposition techniques. The materials were grown using a high degree of hydrogen to germane dilution. The as-grown materials had predominantly orientation. Grain size was found to depend critically upon hydrogen dilution, with low hydrogen dilutions yielding larger grains. Hall measurements showed electron mobility to be as large as 6 cm/sup 2//V-sec. p-n junction devices were made in the material and showed photovoltaic effect. The quantum efficiency extended out to 0.8 eV. Addition of C to Ge reduced the crystallinity.
Published Version
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