Abstract
Growth of lithium-doped ZnSe films has been carried out by atmospheric pressure metalorganic vapor phase epitaxy, using dimethylzinc and dimethylselenide as source materials. Cyclopentadienyl lithium (C5H5Li) was used as a dopant. The films have been characterized by low temperature photoluminescence. It has been shown that the cyclopentadienyl lithium can be a useful lithium-dopant source for MOVPE-grown ZnSe films. The lithium has been reconfirmed to act as a shallow acceptor in ZnSe with an activation energy of about 101–118 meV. In the excitonic emission region, no evidence indicating the presence of interstitial lithium donors has been observed. Furthermore, it has been found that emissions from deep centers, such as self-activated and/or Cu-green emissions, are remarkably suppressed in lithium-doped ZnSe films compared with those in undoped films.
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