Abstract
Hf-doped ZnO thin films with different Hf contents of target (HfxZn1−xO 0 ≤ x ≤ 10 at.%) were deposited on flexible PET substrates under different oxygen pressure using pulsed laser deposition. Microstructures, optical and electrical properties of the films were studied. The results show that the as-deposited HfxZn1−xO (0 ≤ x ≤ 5 at.%) films crystallized in ZnO hexagonal wurtzite structure with a highly preferred c-axis orientation. The films exhibited a transmission of higher than 80 % in the visible region. With increasing Hf content, the lattice constants increased; the morphology of the films deteriorated. The sheet resistance reached a minimum value of 16 Ω/□ when the doping level was about 0.5 at.%.
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