Abstract
Pb ( Zr x , Ti 1 − x ) O 3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)∕TiOx∕SiO2∕Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form ±12to±2.5at.%. The 2μm thick, dense and crack-free films exhibited a {100}-texture index of 98.4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant ε33,f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31,f was measured as −17.7Cm2.
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