Abstract
The growth and properties of CeO 2 and ThO 2 single crystals were studied to make these materials available for lasers and other optical components. CeO 2 and ThO 2 have been grown by the slow cooling and gradient flux techniques using 2NaF·B 2O 3, Li 2Mo 2O 7, NaBO 2, PbF 2·PbO.0.1 B 2O 3 and mixtures of these as solvents. Two growth morphologies were found to exist which depended on flux composition. CeO 2 crystals up to 3 mm on an edge and ThO 2 crystals up to 10 mm on an edge have been grown. The u.v. absorption spectra of CeO 2 and ThO 2 were measured on pure and doped crystals. Several types of color centers (including permanent and bleachable) were found which were promoted by specific impurities. Lead substitution from fluxes and low level Ca 2+ impurities were common causes of color centers.
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