Abstract
E Higher Education Press and Springer-Verlag 2008 Abstract MgxZn12x O( 0,x(0.12) thin films with the wurtzite structure have been successfully grown on c-Al2O3 substrates by metal-organic chemical vapor de- position (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of MgxZn12xO thin films. Results show that with increasing Mg con- tent, the diffraction peak of MgxZn12xO thin films shifts towards a higher diffraction angle (the biggest shift is 0.22u), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the MgxZn12xO films is 113 meV with Mg content x50.12. Therefore, the energy band gap of the MgxZn12xO films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.
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