Abstract
CuAlTe2 thin films have been synthesized by annealing under an argon flow a multilayer structure of thin Cu, Al and Te layers sequentially deposited by evaporation under vacuum. The films have been characterized by X-ray diffraction, microprobe analysis, photoelectron spectroscopy and Raman scattering. At the end of the process, the XRD spectra demonstrate that textured CuAlTe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The Raman patterns are in good accordance with the reference. The XPS spectra show that the binding energies of the elements are in good agreement with bonds of CuAlTe2. Even after a decrease of the oxygen contamination by improvement of the depositing process the oxygen present in the films is found to be about 12 at %.
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