Abstract
CVS (Cu3VS4) materials have the potential to become a new generation of thin film solar cell absorber materials, due to the availability of the constituent materials and a nearly ideal energy gap (1.3–1.5eV). In this study, we investigated the effects of co-sputtering using targets of Cu–V and V and various sulfurization temperatures to produce thin films of various Cu/V ratios. In experiments, CVS films with a high Cu/V ratio presented large surface grains of Cu2-XS with the appearance of secondary phases (CuS, Cu1.8S, Cu2S, and Cu0.7V2.3S4) during H2S sulfurization process. A low Cu/V ratio with high sulfurization temperature produced nearly single-phase CVS. The optimal CVS absorber layer was prepared using a Cu/V ratio of 2.76 with sulfurization for 20 min at a temperature of 550 °C. A prototype CVS thin film solar cell achieved a maximum power conversion efficiency of 3.11%.
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