Abstract
AbstractPhotoluminescence (PL) emitted from Cd1‐xZnxS and CdS1‐ySey solid solution semiconductor was significantly stronger than PL from the pure CdS and CdSe semiconductor. The samples were prepared using an improved Se‐S‐Na2S flux route. Photoluminescence in Cd1‐xZnxS crystal was brightly yellow at the room temperature under VU radiation. The phase and composition of the solid solution was measured by the XRD and was confirmed by UV‐NIS spectrum as x of 0.3 and y of 0.2. The enhanced photoluminescence was presumably due to the introduction of extra defect (vacancies) by solid solution action and consequently the increasing of luminescence center concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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