Abstract
We report the growth of amorphous FeSiBC films on a range of substrates including oriented semiconductor, polycrystalline metal, and polyimide. The films vary in thickness from 2.6 μm down to 20 nm and were characterised by the Magneto-Optic Kerr Effect (MOKE), and for the thicker films a combination of MOKE and a high resolution inductive magnetometer. These measurements imply a skin-depth of 30 nm, at the frequency of the MOKE laser. A representative amorphous FeSiBC film of thickness 0.3 μm was patterned into wires of nominal width 10 μm, separation 5 μm, and length 10 mm by conventional microelectronic fabrication techniques. The switching of the wire-array was investigated by MOKE.
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