Abstract
Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 1015 cm−3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 × 1018 cm−3 and 3 × 1018 cm−3, respectively, for Al0.4Ga0.6As layers. Double-crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-µm × 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics.
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